El Segundo, Calif. – Five new logic-level trench HEXFET power MOSFETs for automotive applications from International Rectifier have all the features of the company's standard gate trench devices and ...
A new range of logic level gate drive trench HEXFET power MOSFETs has been introduced by International Rectifier which features benchmark on-state resistance (RDS(on)) and a high package current ...
NIJMEGEN, THE NETHERLANDS--(Marketwired - Feb 8, 2017) - Nexperia, the former Standard Products division of NXP, today announced the formal completion of its launch as a separate entity. Headquartered ...
When starting a new electronics project today, one of the first things that we tend to do is pick the integrated circuits that make up the core of the design. This can be anything from a ...
Germany-based semiconductor giant Infineon Technologies AGIFNNY recently expanded its StrongIRFET Power MOSFET product suite with the launch of Logic Level StrongIRFET to meet specific demands of ...
Vishay has introduced a 30V n-channel mosfet with an on-resistance of 1.5mΩ (typ) at 4.5Vgate while achieving a 29.8mΩnC gate figure-of-merit (FoM). “The SiSS52DN’s FoM represents a 29% improvement ...
Faster, lower power logic could be made by replacing Mosfets in CMOS with field-effect diodes (FEDs), claims Iranian researcher Dr Farshid Raissi. Field-effect diode? This is a similar device to a ...
International Rectifier has announced a range of logic-level gate drive trench HEXFET power MOSFETs that provide benchmark on-state resistance and a high package current rating for high-power dc ...
HONG KONG, CHINA--(Marketwired - Feb 7, 2017) - Nexperia, the former Standard Products division of NXP, today announced the formal completion of its launch as a separate entity. Headquartered in ...
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