TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced a new gate driver IC that is designed to drive high-voltage ...
Dublin, Oct. 03, 2023 (GLOBE NEWSWIRE) -- The "Gate Driver IC Market: Global Industry Trends, Share, Size, Growth, Opportunity and Forecast 2023-2028" report has been added to ResearchAndMarkets.com's ...
With its integrated bootstrap functionality, PFC or brake, and ground fault protection this latest high-voltage IC is ideal for three-phase inverter applications with space limitations. As part of ...
Santa Clara, CA and Kyoto, Japan, Nov. 08, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today introduced the new BD2311NVX-LB gate driver IC, optimized for GaN devices, which achieves gate drive speeds ...
Santa Clara, CA and Kyoto, Japan, June 25, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the BM6GD11BFJ-LB, an isolated gate driver IC optimized for driving 600V-class ...
International Rectifier, IR®, a world leader in power management technology, introduced the AUIR0815S automotive-qualified IC featuring very high output current in excess of 10 A to drive large IGBTs ...
While attending APEC 2019, it seemed that gallium-nitride (GaN) transistors were just coming into their own in high-volume applications, while silicon-carbide (SiC) transistors have found wide ...
Toshiba is sampling a gate driver IC tailored for three-phase brushless DC (BLDC) motors for functions like power sliding doors, power back doors (power tailgates), and power seats, as well as ...
Minimum Gate Input Pulse Width Characteristics & Gate Voltage Waveform Comparison Fast switching with a minimum gate input pulse width of 1.25ns; suppresses gate voltage overshoot Santa Clara, CA and ...
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