NoMIS Power says its long SCWT devices are well-screened for latent defects and offer easier gate driver desaturation (dSat) ...

Maintenance cost : The life of low-reliability domestic silicon carbide MOSFET devices is only 1-2 years (the life of ...

Housed in a small SO8L package, Toshiba’s TLP5814H gate driver photocoupler provides an active Miller clamp for driving SiC ...

The essence of the problem of bad money in domestic SiC silicon carbide MOSFET In order to pursue the specific on-resistance ...

Onsemi has introduced the first generation of its 1200V SiC MOSFET based SPM 31 intelligent power modules (IPMs).

NoMIS Power's latest advancement significantly extends the SCWT of SiC MOSFETs to a minimum of 5 µs, compared to the current ...

In addition, Vishay will provide a portfolio roadmap for 650 V to 1,700 V SiC MOSFETs with on-resistances ranging from 10 mΩ to 560 Ω. Vishay’s SiC platform is based on a proprietary MOSFET technology ...

In power electronics, silicon carbide beats silicon in most of the metrics that count, except cost. Infineon is trying to ...

In circuits such as inverters, where MOSFETs or IGBTs are used in series, gate voltage can be generated by a Miller current ...

Vishay Intertechnology, Inc. (NYSE: VSH) is set to highlight its latest advancements in power electronics at the Applied Power Electronics Conference and Exposition (APEC) 2025, taking place March ...

For some SiC MOSFETs, which commonly feature higher voltage, lower on-resistance and faster switching characteristics than silicon (Si) MOSFETs, sufficient negative voltage cannot be applied ...