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Samsung confirms next generation HBM4 memory is in fact Snowbolt — and reveals it plans to flood the market with precious AI memory amidst growing competition with SK Hynix ...
Samsung used Memcon 2024 to showcase its HBM3E 12H chip – the industry’s first 12-stack HBM3E DRAM - which is currently ... it intends to apply the buffer die, a control device, to the bottom ...
TweakTown1mon
Samsung rumored to redesign 1c DRAM process for better yields, hopes it will help with HBM4
TL;DR: Samsung is redesigning its 6th-generation 1c DRAM to improve yield rates and support its next-gen HBM4 process. The redesign aims to address issues with chip size and stability, which ...
Semiconductor Engineering9y
1xnm DRAM Challenges
Instead, Samsung is ramping up the world’s most advanced DRAMs—a line of 20nm parts—with plans to go even further. Micron and SK Hynix soon will ship similar parts. Going forward, suppliers hope to ...
TweakTown24d
Samsung to launch next-gen LPW DRAM for on-device AI in 2028: touted as 'mobile HBM'
TL;DR: Samsung Electronics plans to launch its next-generation low-power wide I/O (LPW) DRAM, also known as low-latency wide I/O (LLW), in 2028. This "mobile HBM" memory aims to enhance on-device ...
Business Insider India3y
Samsung develops new RAM technology, claims to offer power savings, better speeds and capacity
South Korean tech giant Samsung has announced a new memory technology in the form of Low Power Double Data Rate 5X or LPDDR5X DRAM designed to drive further growth throughout the high-speed data ...
Digi Times1mon
CXMT advances to 16nm DRAM production, pushes 15nm development
each with a 66.99mm² die size, 0.239Gb/mm² bit density, and an estimated 16nm circuit linewidth. CXMT's G4 DDR5 reduces DRAM cell size by 20% compared to G3 (18nm). For context, Samsung and SK ...