Samsung used Memcon 2024 to showcase its HBM3E 12H chip – the industry’s first 12-stack HBM3E DRAM - which is currently ... it intends to apply the buffer die, a control device, to the bottom ...
TL;DR: Samsung is redesigning its 6th-generation 1c DRAM to improve yield rates and support its next-gen HBM4 process. The redesign aims to address issues with chip size and stability, which ...
Instead, Samsung is ramping up the world’s most advanced DRAMs—a line of 20nm parts—with plans to go even further. Micron and SK Hynix soon will ship similar parts. Going forward, suppliers hope to ...
TL;DR: Samsung Electronics plans to launch its next-generation low-power wide I/O (LPW) DRAM, also known as low-latency wide I/O (LLW), in 2028. This "mobile HBM" memory aims to enhance on-device ...
South Korean tech giant Samsung has announced a new memory technology in the form of Low Power Double Data Rate 5X or LPDDR5X DRAM designed to drive further growth throughout the high-speed data ...
each with a 66.99mm² die size, 0.239Gb/mm² bit density, and an estimated 16nm circuit linewidth. CXMT's G4 DDR5 reduces DRAM cell size by 20% compared to G3 (18nm). For context, Samsung and SK ...