Micron announced it had shipped samples of its sixth-generation DRAM (1γ DRAM), becoming the first in the industry to do so.
TL;DR: Samsung Electronics plans to launch its next-generation low-power wide I/O (LPW) DRAM, also known as low-latency wide I/O (LLW), in 2028. This "mobile HBM" memory aims to enhance on-device ...
Micron Technology has delivered its sixth-generation 10nm DRAM samples ahead of schedule, pressuring Samsung Electronics as ...
TL;DR: Samsung is redesigning its 6th-generation 1c DRAM to improve yield rates and support its next-gen HBM4 process. The redesign aims to address issues with chip size and stability, which ...
In this effort, OCAMM integrates LPDDR5X DRAM with its higher efficiency and compact, upgradeable design. And was able to improve bottlenecks found in AI computing with its 694 I/O ports outpacing ...
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SK hynix says its 3D DRAM is half as expensive to produce — credits EUV chipmaking toolsIn addition to using EUV, 4F^2 cell design, and VCT transistors, Samsung plans to implement stacked DRAM process technology in the early 2030s, which will further boost the density of its memory ...
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