Infineon Technologies AG has extended its portfolio of isolated EiceDRIVER Enhanced gate drivers with the F3 Enhanced (1ED332x) family with short-circuit protection. These devices provide protection ...

Silicon-carbide (SiC) MOSFETs have made significant inroads in the power semiconductor industry thanks to a range of benefits over silicon-based switches. These include faster switching, higher ...

In circuits such as inverters, where MOSFETs or IGBTs are used in series, gate voltage can be generated by a Miller current [1] when the lower arm [2] is turned off, causing malfunctions such as short ...

Versatile, scalable gate drivers rated for 1200 V and 1700 V applications SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (NASDAQ: POWI), the leader in gate-driver technology for medium- and ...

When it comes to selecting a high-power switching device for power-conversion applications, your two main choices were the silicon MOSFET or the IGBT. The latest power-circuit designs such as AC-DC ...

Power Integrations is sampling a family of plug-and-play gate drivers for 62 mm SiC MOSFET and silicon IGBT modules rated up to 1700 V, with enhanced protection features to ensure safe, reliable ...

ST’s galvanically isolated automotive gate driver for SiC MOSFETs and IGBTs gives flexibility to control inverters of different power ratings featuring programmable protections and diagnostics that ...

Silicon Carbide (SiC) power semiconductors are rapidly emerging in the commercial market. These devices offer several benefits over conventional Silicon-based power semiconductors. SiC MOSFETs can ...

Resonant gate drivers are not generally used in commercially available converters, due to the perceived additional complexity. However, there are some striking advantages over conventional gate ...

KAWASAKI, Japan, March 06, 2025--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched a gate driver photocoupler, "TLP5814H," with an output of +6.8A/-4.8A, in a ...