GE Aerospace has announced its fourth generation of SiC power MOSFETs chips at the company’s research centre in Niskayuna, ...

Belgian research hub Imec has achieved a record GaN breakdown voltage exceeding 650V using Shin-Etsu Chemical’s 300-mm QST substrate, which has been adopted for Imec's 300-mm GaN power device ...

China has suspended a year-long ban on exports of gallium, germanium and antimony to the US. The ban was imposed in ...

Another benefit of the aluminium treatment is that it reduces the blue shift in peak wavelength with current density. For the device with aluminium treatment, the peak EQE and wall-plug efficiency ...

According to Infineon, its GaN technology enables significant enhancements in power output, energy efficiency, and system ...

SK Keyfoundry, an 8-inch pure-play foundry in Korea, is accelerating the development of SiC-based power semiconductor ...

BluGlass, an Australian semiconductor developer pioneering visible lasers, has appointed non-executive director Omer Granit ...

Hopewind, one of the largest wind power converter suppliers in China, has taken a novel approach to its wind power solution.

Now a Chinese team, led by Peng Zhou and Wenzhong Bao at Fudan University, has developed a top-gate (TG) 2D ...

Photon Design, a developer of photonic simulation CAD software, will take its PCSEL simulation solution to PCSEL 2025, the ...

Richard Hogg, CTO at III-V Epi, is chairing two sessions at PCSEL 2025, the International Workshop on PCSELs, held at the ...

The result was a next-generation OLED device that reached a world-leading 32.48 percent external quantum efficiency (EQE), ...