The sensor combines 2µs output refresh, speeds above 50,000 rpm and three-axis magnetic sensing in a compact DFN-6 package.
GaN HEMTs with gate-termination extensions show improved single-event hardness, enabling higher operating voltages in LEO ...
Here’s a RoundUp of this month’s must-read news about silicon carbide (SiC), gallium nitride (GaN), and Wide Bandgap ...
Here’s a RoundUp of this week’s must-read articles – we’ll delve into the latest developments on Navitas’ Claros Acquisition, ...
Navitas CEO Chris Allexandre and Claros CEO Dan Kultran discuss the planned acquisition, Claros's 40 A IVR chip, and the deal ...
The nPZ2100 manages sensors and peripherals autonomously, reducing MCU wake-ups and energy consumption in battery-powered ...
Rad-hard MOSFETs, GaN transistors and other HiRel devices provide reliable power for the telescope’s demanding space mission.
The 650V GaN FET family targets high-efficiency power conversion for AI data centers, computing, industrial and critical ...
Integrated GaN FETs, drivers and protection support compact, high-efficiency motor drives for robotics, drones and other applications. The monolithic devices integrate high-side and low-side ...
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