Design-Reuse10y
Micro-threaded Row and Column Operations in a DRAM Core
The technique of micro-threading may be applied to the core of a DRAM to reduce the row and column access granularity. This results in a significant performance benefit for those applications that ...
Semiconductor Engineering4d
Experimental Characterization Results and State-of-the-Art Device-Level Studies of DRAM Read Disturbance
A new technical paper titled “Revisiting DRAM Read Disturbance: Identifying Inconsistencies Between Experimental ...
Design-Reuse2y
LPDRAM4/4X Performance Tweaks
I. Bank rotation/interleaving Each DRAM memory rank is organized in a BANK-ROW-COLUMN structure. When the DDR controller receives a request to read/write data into a memory location, it has to send ...
Semiconductor Engineering26d
Effects Of Reduced Refresh Latency On RowHammer Vulnerability Of DDR4 DRAM Chips
“RowHammer is a major read disturbance mechanism in DRAM where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in physically nearby DRAM rows (victim rows). To ensure ...