Power device makers roll out their latest advances at APEC 2025, targeting a range of applications from AI data centers to ...

ONSEMI EliteSiC SPM 31 IPMs are firm’s first generation of 1200V silicon carbide (SiC) metal oxide semiconductor field-effect ...

We recently compiled a list of the 12 Cheap EV Stocks to Buy According to Hedge Funds. In this article, we are going to take ...

V SiC MOSFET based SPM 31 IPMs. These IPMs deliver the highest energy efficiency and power density in the smallest form factor compared to utilising Field Stop 7 IGBT technology, resulting in lower ...

SemiQ’s 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.

Upgrades to Keysight’s double-pulse test systems bring easier and even higher-accuracy measurement of dynamic characteristics ...

Complex materials such as organic compound semiconductors or the microporous metal-organic frameworks known as MOFs are ...

The work 'Hyperbolic phonon-polariton electroluminescence in 2D heterostructures', led by researchers at the US Advanced ...

Vishay Intertechnology has introduced a new Gen 4.5 650 V E Series power MOSFET that delivers high efficiency and power density for telecom, industrial, and computing applications ...

Silicon carbide is made by incorporating silicon and carbon. These aspects are heated up to really heats. The process starts ...