SemiQ’s 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.

NoMIS Power claims a breakthrough in the short-circuit withstand time of SiC MOSFETs; opens up new opportunities in high ...

The MOSFETs with top-side cooling provide better cooling, easy setup, and reliable performance for industrial use and EV ...

Jensen Huang’s keynote at GTC 2025, the Android 16 Beta 3 release, the state of solid-state EV battery startups, Nexperia's ...

Avantax Advisory Services Inc. decreased its stake in shares of Diodes Incorporated (NASDAQ:DIOD – Free Report) by 38.2% ...

Cibc World Markets Corp purchased a new stake in shares of Diodes Incorporated (NASDAQ:DIOD – Free Report) in the fourth ...

SMA America is expanding its large-scale storage portfolio with the Sunny Central Storage UP-S battery inverter, now available in the U.S. Designed for ...

ONSEMI EliteSiC SPM 31 IPMs are firm’s first generation of 1200V silicon carbide (SiC) metal oxide semiconductor field-effect ...

The inverters use a silicon carbide metal-oxide-semiconductor field-effect transistor for high power conversion capability.

With self-developed chips Apple will reduce its dependence on third-party suppliers, thereby reducing component costs and ...

The Compound Semiconductor Materials Market is on a high-growth trajectory, with projections indicating an increase from USD ...

Silicon carbide is made by combining silicon and carbon. These aspects are heated up to really heats. The process begins with ...