SemiQ’s 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.
NoMIS Power claims a breakthrough in the short-circuit withstand time of SiC MOSFETs; opens up new opportunities in high ...
Nexperia has introduced a range of industrial grade 1200 V SiC MOSFETs in surface-mount (SMD) top-side cooled packaging ...
Maintenance cost : The life of low-reliability domestic silicon carbide MOSFET devices is only 1-2 years (the life of competing TDDB is 10³ hours ≈ 41 days of continuous operation), while the life of ...
The MOSFETs with top-side cooling provide better cooling, easy setup, and reliable performance for industrial use and EV ...
Housed in a small SO8L package, Toshiba’s TLP5814H gate driver photocoupler provides an active Miller clamp for driving SiC ...
For some SiC MOSFETs, which commonly feature higher voltage, lower on-resistance and faster switching characteristics than silicon (Si) MOSFETs, sufficient negative voltage cannot be applied between ...
NoMIS Power's latest advancement significantly extends the SCWT of SiC MOSFETs to a minimum of 5 µs, compared to the current ...
Jensen Huang’s keynote at GTC 2025, the Android 16 Beta 3 release, the state of solid-state EV battery startups, Nexperia's ...
Vishay Intertechnology has announced that its newly released 1200V MaxSiC SiC MOSFETs will take centre stage at the Applied Power Electronics Conference and Exposition (APEC) 2025, March 16-20 in ...
Avantax Advisory Services Inc. decreased its stake in shares of Diodes Incorporated (NASDAQ:DIOD – Free Report) by 38.2% ...
The DNA of tech® is a registered trademark of Vishay Intertechnology, Inc. MaxSiCâ„¢ is a trademark of MaxPower Semiconductor, Inc. Registration pending. IHLE, ThermaWick, Power Metal Strip and eSMP are ...
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