Design-Reuse10y
Micro-threaded Row and Column Operations in a DRAM Core
The technique of micro-threading may be applied to the core of a DRAM to reduce the row and column access granularity. This results in a significant performance benefit for those applications that ...
Semiconductor Engineering2d
Experimental Characterization Results and State-of-the-Art Device-Level Studies of DRAM Read Disturbance
A new technical paper titled “Revisiting DRAM Read Disturbance: Identifying Inconsistencies Between Experimental ...
Computer Weekly4y
Royal Holloway: Rowhammer – from DRAM faults to escalating privileges
A side effect in dynamic random-access memory (DRAM) that occurs due to increased density, creating a challenge to prevent cell charges from interacting with adjacent cells, has evolved to the ...
Semiconductor Engineering24d
Effects Of Reduced Refresh Latency On RowHammer Vulnerability Of DDR4 DRAM Chips
“RowHammer is a major read disturbance mechanism in DRAM where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in physically nearby DRAM rows (victim rows). To ensure ...