Nexperia has introduced a range of highly efficient and robust industrial grade 1200V SiC MOSFETs with industry-leading temperature stability in innovative surface-mount (SMD) top-side cooled ...

Silicon carbide is made by combining silicon and carbon. These aspects are heated up to really heats. The process begins with ...

ONSEMI EliteSiC SPM 31 IPMs are firm’s first generation of 1200V silicon carbide (SiC) metal oxide semiconductor field-effect ...

Jensen Huang’s keynote at GTC 2025, the Android 16 Beta 3 release, the state of solid-state EV battery startups, Nexperia's ...

V SiC MOSFET based SPM 31 IPMs. These IPMs deliver the highest energy efficiency and power density in the smallest form factor compared to utilising Field Stop 7 IGBT technology, resulting in lower ...

The inverters use a silicon carbide metal-oxide-semiconductor field-effect transistor for high power conversion capability.

NoMIS Power claims a breakthrough in the short-circuit withstand time of SiC MOSFETs; opens up new opportunities in high ...

SemiQ’s 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.

SMA America is expanding its large-scale storage portfolio with the Sunny Central Storage UP-S battery inverter, now available in the U.S. Designed for ...

The MOSFETs with top-side cooling provide better cooling, easy setup, and reliable performance for industrial use and EV ...

Taiwan Semiconductor (TSC) has expanded its PerFET family of power MOSFETs with the addition of 80V and 100V versions. Based ...

Nexperia has introduced a range of industrial grade 1200 V SiC MOSFETs in surface-mount (SMD) top-side cooled packaging ...