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The international fashion brand under the H&O Group is investing approximately NIS 4 million in its sixth store in Israel, ...

Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based ...

"Redland," formerly known as "Underground Deep Palace," is adapted from the novella "Red Earth" by Xiao Xinghan. The story ...

Use precise geolocation data and actively scan device characteristics for identification. This is done to store and access ...

On Wednesday, March 19th, Gan Academy invites the Crown Heights community and friends around the world to invest in the ...

Despite recent tensions between the United States government and Latin American countries over migration and tariffs, th ...

Upgrades to Keysight’s double-pulse test systems bring easier and even higher-accuracy measurement of dynamic characteristics ...

Nexperia has expanded its GaN FET portfolio with 12 new E-mode devices, available in both low- and high-voltage options.

Researchers demonstrate scalable integration of graphene and GaN devices using van der Waals forces, enabling high-performance CMOS-compatible electronics.

GaN specialist Efficient Power Conversion (EPC) has introduced the EPC2367, a next-generation 100 V eGaN FET for power ...