GE Aerospace has announced its fourth generation of SiC power MOSFETs chips at the company’s research centre in Niskayuna, ...

Belgian research hub Imec has achieved a record GaN breakdown voltage exceeding 650V using Shin-Etsu Chemical’s 300-mm QST substrate, which has been adopted for Imec's 300-mm GaN power device ...

Another benefit of the aluminium treatment is that it reduces the blue shift in peak wavelength with current density. For the device with aluminium treatment, the peak EQE and wall-plug efficiency ...

According to Infineon, its GaN technology enables significant enhancements in power output, energy efficiency, and system ...

SK Keyfoundry, an 8-inch pure-play foundry in Korea, is accelerating the development of SiC-based power semiconductor ...

China has suspended a year-long ban on exports of gallium, germanium and antimony to the US. The ban was imposed in ...

Now a Chinese team, led by Peng Zhou and Wenzhong Bao at Fudan University, has developed a top-gate (TG) 2D ...

Hopewind, one of the largest wind power converter suppliers in China, has taken a novel approach to its wind power solution.

Richard Hogg, CTO at III-V Epi, is chairing two sessions at PCSEL 2025, the International Workshop on PCSELs, held at the ...

Sivers Semiconductors AB has appointed Raymond Biagan as its new chief revenue officer (CRO), effective November 10, 2025. In ...